PART |
Description |
Maker |
MRF1507 MRF1507T1 |
LATERAL NCHANNEL BROADBAND RF POWER MOSFET
|
Motorola, Inc.
|
SVD8N60F SVD8N60T |
8A, 600V NCHANNEL MOSFET
|
Silan Microelectronics Joint-stock
|
IRLL024NQ IRLL024NQTRPBF |
3.1 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET HEXFET? Power MOSFET HEXFET㈢ Power MOSFET 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NS |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) (IRFZ44NL / IRFZ44NS) Power MOSFET TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 49A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 49A条(丁)|63AB
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRLL024N IRLL024NPBF IRLL024NTR |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package HEXFET Power MOSFET(HEXFET 功率MOS场效应管) HEXFET Power MOSFET(HEXFET ???MOS?烘?搴??) 4.4 A, 55 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
|
IRF[International Rectifier]
|
SFW12955 SFW2955 |
Advenced Power MOSFET 9.4 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB Advanced Power MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
NTP75N06 NTP75N06D NTP75N06G NTB75N06 NTB75N06G NT |
Power MOSFET 75 A, 60 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET 75 Amps, 60 Volts
|
ONSEMI[ON Semiconductor]
|
VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER VERTICAL MOSFET
|
Microsemi, Corp. Microsemi Corporation
|
IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR |
Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A) (IRFR120N / IRFU120N) HEXFET Power MOSFET HEXFET® Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package 9.1 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
IRF[International Rectifier]
|
VRF152E VRF152EMP VRF152E10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; VDD (V): 50; Coss (pF): 220; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER VERTICAL MOSFET
|
Microsemi, Corp. Microsemi Corporation
|
IRFBA22N50APBF |
24 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-273AA HEXFET㈢Power MOSFET HEXFET?Power MOSFET
|
International Rectifier
|
|